Q2008LH4
| Model | Q2008LH4 |
| Description | Alternistor Triacs |
| PDF file | Total 10 pages (File size: 190K) |
| Chip Manufacturer | TECCOR |
Alternistor Triacs
Data Sheets
Part Number
I
T(RMS)
(4)(16)
A
Isolated
MT2
Non-isolated
V
DRM
(1)
I
GT
(3) (7) (15) (17)
A
MT2
G
MT2
MT1
MT1
MT2
G
K
A
G
K
A
G
MT1
G
MT2
mAmps
TO-263
D
2
Pak
Q2016NH3
Q4016NH3
Q6016NH3
Q8016NH3
QK016NH3
Q2016NH4
Q4016NH4
Q6016NH4
Q8016NH4
QK016NH4
Q2016NH6
Q4016NH6
Q6016NH6
Q8016NH6
QK016NH6
Q2025NH6
Q4025NH6
Q6025NH6
Q8025NH6
QK025NH6
Volts
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
QI
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
QII
MAX
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
QIII
T0-220
MAX
Q2016LH3
Q4016LH3
Q6016LH3
Q8016LH3
QK016LH3
Q2016LH4
Q4016LH4
TO-218
(16)
TO-218X
TO-220
Q2016RH3
Q4016RH3
Q6016RH3
Q8016RH3
QK016RH3
Q2016RH4
Q4016RH4
Q6016RH4
Q8016RH4
QK016RH4
Q2016RH6
Q4016RH6
Q6016RH6
Q8016RH6
QK016RH6
See “Package Dimensions” section for variations. (11)
16 A
Q6016LH4
Q8016LH4
QK016LH4
Q2016LH6
Q4016LH6
Q6016LH6
Q8016LH6
QK016LH6
Q2025L6
Q2025K6
Q4025K6
Q6025K6
Q8025K6
QK025K6
Q2025J6
Q4025J6
Q6025J6
Q8025J6
Q4025L6
Q6025L6
Q8025L6
QK025L6
Q2030LH5
Q4030LH5
Q6030LH5
Q2025R6
Q4025R6
Q6025R6
Q8025R6
QK025R6
25 A
30 A
35 A
Q2040K7
Q4040K7
Q2040J7
Q4040J7
Q6040J7
Q8040J7
Q2035RH5
Q4035RH5
Q6035RH5
Q2035NH5
Q4035NH5
Q6035NH5
200
400
600
200
400
600
800
1000
40 A
Q6040K7
Q8040K7
QK040K7
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
Test Conditions
di/dt
— Maximum rate-of-change of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
— Peak off-state current gate open; V
DRM
= maximum rated value
I
GT
— DC gate trigger current in specific operating quadrants;
V
D
= 12 V dc
I
GTM
— Peak gate trigger current
2
I
H
— Holding current (DC); gate open
I
T(RMS)
— RMS on-state current conduction angle of 360°
I
TSM
— Peak one-cycle surge
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation;
I
GT
£
I
GTM
t
gt
— Gate controlled turn-on time; I
GT
= 300 mA with 0.1 µs rise time
V
DRM
— Repetitive peak blocking voltage
V
GT
— DC gate trigger voltage; V
D
= 12 V dc
V
TM
— Peak on-state voltage at maximum rated RMS current
http://www.teccor.com
+1 972-580-7777
E4 - 4
©2002 Teccor Electronics
Thyristor Product Catalog
