Q62702-G0067
| Model | Q62702-G0067 |
| Description | Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
| PDF file | Total 5 pages (File size: 39K) |
| Chip Manufacturer | INFINEON |
2
= 22 dB at 1.8 GHz (appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,
I
D
=9.4mA)
•
Noise figure
NF
= 2.2 dB at 1.8 GHz
•
typical device voltage
V
D
= 2 V to 5 V
•
Reverse isolation < 35 dB (appl.2)
4
3
4
2
1
VPS05605
3
+
V
OUT
Circuit Diagram
IN
1
2
GND
EHA07378
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BGA 427
Parameter
Marking Ordering Code
BMs
Q62702-G0067
Pin Configuration
1, IN
2, GND
Symbol
Package
3, +V
4, Out
Value
25
6
150
-10
150
-65 ...+150
-65 ...+150
SOT-343
Unit
mA
V
mW
dBm
°C
Maximum Ratings
Device current
Device voltage
Total power dissipation,
T
S
≤
tbd °C
I
D
V
D
,+V
P
tot
P
RFin
T
j
T
A
T
stg
1)
R
F
input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
≤
tbd
K/W
1)
T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
1
1
Au
1998-11-01
-11-1998
