Q62702-S021
Model | Q62702-S021 |
Description | SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
PDF file | Total 7 pages (File size: 81K) |
Chip Manufacturer | INFINEON |
BSS 125
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th)
= 1.5 ...2.5 V
Pin 1
G
Type
BSS 125
Type
BSS 125
BSS 125
BSS 125
Pin 2
D
Marking
SS125
Pin 3
S
V
DS
600 V
I
D
0.1 A
R
DS(on)
45
Ω
Package
TO-92
Ordering Code
Q62702-S021
Q67000-S008
Q67000-S233
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
600
600
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.1
T
A
= 35 °C
DC drain current, pulsed
I
Dpuls
0.4
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997