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Home > Data Sheet > R-11-040AB-P-S/V-GR
R-11-040AB-P-S/V-GR

R-11-040AB-P-S/V-GR

Model R-11-040AB-P-S/V-GR
Description Photodiode Detector, 1100nm Min, 1650nm Max, Through Hole Mount, ROHS COMPLIANT, HEREMATICAL SEALED PACKAGE-3
PDF file Total 4 pages (File size: 146K)
Chip Manufacturer SOURCE
P/N: R-11-040AX-P-SXX/XXX-X-XX
40um Analog InGaAs PIN Photodiode Modules-pigtailed
Features
InGaAs/InP PIN Photodiode
High responsivity at 1310nm and 1550nm
Low dark current
Low intermodulation distortion
High responsivity
Hermetically sealed 3-pin metal case
Packaging
SM fiber pigtailed with optional FC/ST/SC connector
Application
Return path Analog CATV optical receivers to 2.5GHz
RoHS Compliant available
Absolute Maximum Ratings (Tc=25
°C
)
Parameter
Supply Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Symbol
V
R
I
F
I
R
T
opr
T
stg
Value
20
2
1
-40 ~ 85
-40 ~ 100
Unit
V
mA
mA
°C
°C
(All optical data refer to coupled 9/125
μ
m SM fiber)
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Operating Voltage
Detection Range
Responsivity
Linearity IMD2
Dark Current
Capacitance
Rise / Fall Time
Bandwidth
Optical Return Loss
Symbol
V
op
Min.
-
1100
Typ.
-
1310
0.8
0.9
-70
-
-
-
-
-
Max.
15
1650
-
-
-
0.8
0.35
0.125
-
-
Unit
V
nm
A/W
dBc
nA
pF
ns
GHz
dB
Notes
-
-
V
R
= 5V,
λ
= 1310nm
V
R
= 5V,
λ
= 1550nm
Note 1
V
R
= 5V
Note 2
V
R
= 5V, 10%~90%
V
R
= 5V
λ
= 1310nm
R
IMD2
I
dark
C
t
T
r /
T
f
BW
ORL
0.75
0.8
-
-
-
-
8
40
Note:
1. V
R
=12V, P
AVG
=0dBm, MI=0.7, R
LOAD
=50Ω, f
1
+f
2
=324.25MHz, f
1
-f
2
=54.25MHz
2. V
R
=5V, Case grounded
1
DS-6033 Rev 0.0 2010-03-12
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