R-11-075-G-AB
| Model | R-11-075-G-AB |
| Description | Photo Diode, |
| PDF file | Total 5 pages (File size: 895K) |
| Chip Manufacturer | SOURCE |
InGaAs PIN Photodiode
R-11-XXX-G-A(B)
Features
• InGaAs/InP PIN Photodiode
• High Responsivity @1310 nm and 1550 nm
• Low dark current
• Fast pulse response
• -40 to 85ºC operating temperature
• Hermetically sealed 3-pin metal case
• Active diameter is 40, 55, 75,100 or 300 µm
• TO-46 package wih intergrated flat window cap
• Connectorized receptacle module application
• Coaxial pigtail module application
• Data and Telecommunication application
Absolute Maximum Rating (Tc=25ºC)
Parameter
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Symbol
V
R
I
F
I
R
T
opr
T
stg
Min
-
-
-
-40
-40
Max
20
2
1
+85
+85
Unit
V
mA
mA
ºC
ºC
R-11-040-G-A(B)
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area(Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.75
-
-
4
Typical
40
1310
0.8
-
0.7
-
Max
-
1650
-
0.8
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
R-11-055-G-A(B)
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area(Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.75
-
-
3
Typical
55
1310
0.8
-
0.8
-
Max
-
1650
-
0.8
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
1
LUMNDS008-OCT1504
rev. A.0
