RZ1055
| Model | RZ1055 |
| Description | Avalanche Diodes with built-in Thyristor |
| PDF file | Total 2 pages (File size: 23K) |
| Chip Manufacturer | SANKEN |
Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings
Parameter
Type No.
V
RDC
(V)
(–10ºC)
I
TSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
Z
(V)
I
R
(µA)
V
R
= V
RM
max
I
R
(H)
(µA)
V
R
= V
RM
Ta =100°C max
Others
Tj
(°C)
(typ.)
Mass
Fig.
(g)
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
RZ1175
RZ1200
EZ0150
20
28
40
27 to 33
34 to 40
50 to 60
60 to 70
30
–10 to +125
–40 to +150
90 to 110
115 to 135
140 to 160
165 to 185
185 to 215
140 to 160
0.03
0.05
0.07
0.44
10
50
0.18
0.22
0.30
0.18
0.2
B
A
*
*
*
50
80
105
125
150
180
125
*
Under development
RZ1030
22
DC reverse blocking voltage V
R (DC)
(V)
RZ1040
50
Reverse breakdown voltage
V
Z
(V)
V
R(DC)
Temperature characteristic
V
Z
Temperature dependence
DC reverse blocking voltage V
R(DC)
(V)
30
V
R(DC)
Temperature characteristic
Reverse breakdown voltage
V
Z
(V)
55
50
45
40
38
35
30
28
25
V
Z
Temperature dependence
21
45
40
35
31.9
30
25.9
25
22
20
–10 0
max
min
36
29
max
20
28
min
19
30
27
V
RDC
Temperature characteristic
18
V
RDC
Temperature characteristic
26
–10 0
25
50
75
100
125
25
50
75
100
125
–10 0
25
50
75
100
125
–10 0
25
50
75
100
125
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
RZ1055
45
DC reverse blocking voltage V
R (DC)
(V)
RZ1065
70
Reverse breakdown voltage
V
Z
(V)
V
R(DC)
Temperature characteristic
V
Z
Temperature dependence
67
max
65
60
57.6
55
50
47.6
45
40
–10 0
25
50
40
57
min
V
RDC
Temperature characteristic
35
–10 0
25
50
75
100
125
75
100
125
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
RZ1100
RZ1125
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.78
±0.05
Fig.
B
0.6
±0.05
Equivalent circuit diagram
Cathode Mark
Cathode Mark
62.5
±0.7
62.3
±0.7
7.2
±0.2
5.0
±0.2
4.0
±0.2
2.7
±0.2
110
