S106M1
| Model | S106M1 |
| Description | Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202 |
| PDF file | Total 2 pages (File size: 130K) |
| Chip Manufacturer | HUTSON |
MAXIMUM RATINGS
SYMBOL VDRM
50
100
200
400
600
DEVICE NUMBERS
200µA Gate
S106F*
S106A*
S106B*
S106D*
S106M*
S206F*
S206A*
S206B*
S206D*
S206M*
S306F*
S306A*
S306B*
S306D*
S306M*
UNITS
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
VDRM &
VRRM
VOLT
500µA Gate
50
100
200
400
600
S107F*
S107A*
S107B*
S107D*
S107M*
4.0
40
1
15
0.1
S207F*
S207A*
S207B*
S207D*
S207M*
6.0
60
1
15
0.1
-40 to +150
-40 to +110
S307F*
S307A*
S307B*
S307D*
S307M*
8.0
80
1
15
0.1
AMP
AMP
AMP
WATT
WATT
°C
°C
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION, ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,
ONE-CYCLE, AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, Tj
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1)
TC = 110° C VDRM &VRRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (PEAK) AT TC = 25° C
AND IT = RATED AMPS
DC HOLDING CURRENT, (1)AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)
FOR VD = VDRM GATE OPEN, TC = 110° C
DC GATE-TRIGGER CURRENT FOR ANODE
VOLTAGE - 6VDC, RL = 100
Ω
AND
AT TC = 25° C
DC GATE - TRIGGER VOLTAGE FOR ANODE VOLTAGE =
6VDC, RL = 100
Ω
AND AT TC = 25° C
GATE CONTROLLED TURN-ON TIME FOR
t D+ t R, IGT = 20 mA and TC = 25° C
THERMAL RESISTANCE, JUNCTION-TO-CASE
IT(RMS)
ITSM
IGTM
PGM
PG(AV)
Tstg
Toper
IDRM &
IRRM
VTM
IHO
CRITICAL
dv/dt
0.1
2.2
3
8
200
0.1
1.6
6
5
200
500
0.8
2
4.4
0.1
2.5
6
5
200
500
0.8
2
4.4
MA
MAX.
VOLT
MAX.
MA
MAX.
V/µSEC.
µA MAX.
µA MAX.
VOLT
MAX.
µsec.
°C / WATT
TYP
IGT
500
VGT
T gt
R0J-C
0.8
1.2
5
*Note:
Device number suffix 1 = with TAB (Type 1)
Device number suffix 2 = no TAB (Type 2)
(1) R G – K = 1 K
Ω
SOLID STATE CONTROL DEVICES
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