S10VB20
| Model | S10VB20 |
| Description | Bridge Diode(200V 10A) |
| PDF file | Total 5 pages (File size: 264K) |
| Chip Manufacturer | SHINDENGEN |
SHINDENGEN
Bridge Diode
Square In-line Package
S10VB20
200V 10A
OUTLINE DIMENSIONS
Case : S10VB
Unit : mm
RATINGS
● Absolute
Maximum Ratings
Item
Symbol
Conditions
Tstg
Storage Temperature
Tj
Operating Junction Temperature
V
RM
Maximum Reverse Voltage
I
O
50Hz sine wave, R-load, Ta=40℃ With heatsink,
θfa=2.4℃/W
Average Rectified Forward Current
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
Mounting Torque
I
FSM
I
2
t
Vdis
TOR
50Hz sine wave, R-load, Ta=40℃ Without heatsink
50Hz sine wave, Non-repetitive
1cycle
peak value, Tj=25℃
1ms≦t＜10ms Ｔc=25℃
Terminals to case, AC
1
minute
（Recommended
torque : 0.5N�½�m）
Ratings Unit
-40�½�150
℃
150
℃
200
V
10
A
3.7
200
A
110
A
2
�½�
2
kV
0.8
N�½�m
Ratings Unit
Max.1.05 V
Max.10
μA
Max.2.8
℃/W
● Electrical
Characteristics (Tl=25℃)
Item
Symbol
Conditions
V
F
I
F
=5A,
Forward Voltage
Pulse measurement, Rating of per diode
I
R
V
R
=V
RM
, Pulse measurement, Rating of per diode
Reverse Current
θjl
junction to lead
Thermal Resistance
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
