S1210XH
| Model | S1210XH |
| Description | The S12xxxH series of SCRs uses a high performance MESA |
| PDF file | Total 5 pages (File size: 65K) |
| Chip Manufacturer | STMICROELECTRONICS |
®
S12xxxH
SCR
FEATURES
I
T(RMS)
= 12A
V
DRM
= 200V to 800V
High surge current capability
K
A
G
DESCRIPTION
The S12xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 100 mA
di
G
/dt = 1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Tc= 90°C
Tc= 90°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Value
12
7.6
132
120
72
100
- 40, + 150
- 40, + 125
260
A
2
s
A/µs
°C
°C
Unit
A
A
A
I
2
t
dI/dt
T
stg
T
j
Tl
Symbol
V
DRM
V
RRM
January 1995
Parameter
B
Repetitive peak off-state voltage
T
j
= 125°C
200
Voltage
D
400
M
600
N
800
Unit
V
1/5
