S1231
| Model | S1231 |
| Description | Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER |
| PDF file | Total 2 pages (File size: 57K) |
| Chip Manufacturer | IRF |
Bulletin I0143J 01/01
S1231
PHASE CONTROL THYRISTORS
Junction Size
Wafer Size
V
RRM
/ V
DRM
Class
Passivation Process
Reference IR Packaged Part
:
Square 180 mils - IR180SH12H/ S1231
:
4"
:
1200 V
:
Glassivated MESA
:
n. a.
Major Ratings and Characteristics
Parameters
V
TM
Typical On-state Voltage
Units
1.3 V
1200 V
5 to 45 mA
1.9 V
5 to 150 mA
400 mA
Test Conditions
T
J
= 25°C, I
T
= 25 A
T
J
= 25°C, I
RRM
= 300 µA
(1)
V
RRM
/ V
DRM
Reverse Breakdown Voltage
I
GT
V
GT
I
H
I
L
Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
T
J
= 25° C, anode supply = 6 V, resistive load
T
J
= 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 15 KA)
Cr - Ni - Ag (1 KA - 4 KA - 15 KA)
180 x 180 mils (see drawing)
100 mm, with std. < 100 > flat
350 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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