S18
| Model | S18 |
| Description | Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, |
| PDF file | Total 4 pages (File size: 460K) |
| Chip Manufacturer | YANGJIE |
S12 THRU S120
Surface Mount Schottky Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Guardring for overvoltage protection
● Low power losses, high efficiency
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Mechanical Date
●
Package:
SOD-123FL
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
●
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
Cathode line denotes the cathode end
■
Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, Resistance load,
Ta (FIG.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Tj=25℃
Storage temperature
Junction temperature
VRRM
V
SYMBOL
UNIT
S12
S12
20
S13
S13
30
S14
S14
40
S15
S15
50
S16
S16
60
S18
S18
80
S110
S110
100
S115
S115
150
S120
S120
200
IO
A
1.0
IFSM
Tstg
Tj
A
℃
℃
-55 ~+125
30
-55 ~+150
-55 ~+150
■Electrical
Characteristics
(Ta=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
SYMBOL UNIT
TEST
CONDITIONS
IFM=1.0A
S12
S13
S14
S15
S16
S18
S110
S115
S120
VF
V
0.50
0.50
10
0.70
0.85
0.10
5
0.90
Ta=25℃
IRRM
mA
Ta=100℃
1/4
S-S080
Rev. 2.4, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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