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SDT452AP

SDT452AP

Model SDT452AP
Description P -Channel E nhancement Mode F ield E ffect Transistor
PDF file Total 5 pages (File size: 397K)
Chip Manufacturer SAMHOP
S DT 452AP
S amHop Microelectronics C orp.
Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
-30V
F E AT UR E S
( m
W
) TYP
I
D
-5.3A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
52 @ V
G S
= -10V
85 @ V
G S
= -4.5V
R ugged and reliable.
S OT-223 P ackage.
D
D
D
G
S OT-223
S
D
G
S OT-223 (J 23Z)
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
-P ulsed
a
S ymbol
V
DS
V
GS
@ TJ=125 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
-30
20
-5.3
-16
5.3
3
0.08
-65 to 150
Unit
V
V
A
A
A
W
W/ C
C
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
1
R
JC
R
JA
12
42
C /W
C /W
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