T1020W
| Model | T1020W |
| Description | SNUBBERLESS TRIAC |
| PDF file | Total 5 pages (File size: 67K) |
| Chip Manufacturer | STMICROELECTRONICS |
T1020W / 1030W
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360° conduction angle)
Parameter
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
V
GT
V
GD
tgt
I
H
*
V
TM
*
I
DRM
I
RRM
dV/dt *
(dV/dt)c *
Test Conditions
V
D
=12V (DC) R
L
=33Ω
V
D
=12V (DC) R
L
=33Ω
V
D
=V
DRM
R
L
=3.3kΩ
V
D
=V
DRM
I
G
= 500mA
dl
G
/dt= 3Aµs
I
T
= 100mA
Gate open
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Linear slope up to
Gate open
V
D
=67%V
DRM
(dI/dt)c = 5.3 A/ms
Tj= 125°C
Quadrant
I-II-III
I-II-III
I-II-III
I-II-III
MAX
MAX
MIN
TYP
MAX
MAX
MAX
MAX
MIN
MIN
200
10
35
1.5
10
2
300
20
T1020
20
1.5
0.2
2
50
V
µA
mA
V/µs
V/µs
T1030
30
Unit
mA
V
V
µs
I
GM
= 4 A (tp = 20
µs)
I
TM
= 14A tp= 380µs
V
DRM
rated
V
RRM
rated
(see note) Tj= 125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note :
In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is
unnecessary
to use
a snuber R-C network accross T1020W / T1030W triacs.
2/5
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