T10A068
| Model | T10A068 |
| Description | Glass passivated junction |
| PDF file | Total 1 pages (File size: 71K) |
| Chip Manufacturer | LITTELFUSE |
T10A series Sibod
™
FEATURES
G
Glass passivated junction
G
High current diverting capability (150A, 8x20µs)
G
Low capacitance, less than 100pF
G
UL recognized
G
Automatic reset
G
Does not degrade
0.76
0.86
APPLICATION
G
Bi-directional device for telephone and line card protection
25.4 min
3.05
3.25
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
SYMBOL
V
RM
V
BR
I
H
V
R
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
Continuous Reverse Voltage
6.10
6.47
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm
SYMBOL
P
Ipp
Peak Pulse Current
PARAMETER
Power dissipation on infinite heatsink
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
1.7
50
37.5
100
30
100
-40 to 150
150
230
UNIT
W
A
25.4 min
I
tsm
di/dt
T stg
Tj
T
l
Non-repetitive surge peak on-state current
Critical rate of rise of on-state current
Storage and operating junction
Temperature range
Maximum lead temperature for soldering
during 10s at 4mm from case
A
A/us
°C
°C
°C
All dimensions in mm
THERMAL RESISTANCES
SYMBOL
Rth(j-i)
Rth(j-a)
PARAMETER
Junction-leads on infinite heatsink
Junction-ambient on printed circuit
L = 10mm
VALUE
60
100
UNIT
°C/W
°C/W
All parameters are tested using Fet Test ™ Model 3600
DEVICE
TYPE
T10A062
T10A068
T10A100
T10A120
T10A130
T10A180
T10A200
T10A220
T10A240
T10A270
2
2
2
2
2
2
2
2
2
2
I
RM
@ V
RM
max
I
R
@ V
R
max
V
BO
@
I
BO
max
V
62
68
100
120
130
180
200
220
240
270
V
82
90
133
160
173
240
267
293
320
370
mA
800
800
800
800
800
800
800
800
800
800
I
H
min
mA
150
150
150
150
150
150
150
150
150
150
µ
A
V
56
61
90
108
117
162
180
198
216
243
µ
A
50
50
50
50
50
50
50
50
50
50
ORDERING INFORMATION
T10A
Voltage
Holding
Current Optio n
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
54
w w w. l i t t e l f u s e . c o m
