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T10B200

T10B200

Model T10B200
Description Glass passivated junction
PDF file Total 1 pages (File size: 74K)
Chip Manufacturer LITTELFUSE
T10B series Sibod
FEATURES
G
Glass passivated junction
G
High current diverting capability 250A
G
Low capacitance, less than 200pF
G
UL recognized
G
Automatic reset
G
Does not degrade
Ø1.016±0.050
APPLICATION
G
Bi-directional device for telephone and line card protection
25.4 min
+0.127
Ø5.080
-0.254
+0.127
9.400
-0.254
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
SYMBOL
V
RM
V
BR
I
H
V
R
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
Continuous Reverse Voltage
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm
SYMBOL
P
PARAMETER
Power dissipation on infinite heatsink
Peak Pulse Current
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
5
100
125
250
50
100
-40 to 150
150
230
UNIT
W
A
25.4 min
I
pp
I
tsm
di/dt
T stg
Tj
T
I
Non-repetitive surge peak on-state current
Critical rate of rise of on-state current
Storage and operating junction
Temperature range
Maximum lead temperature for soldering
during 10s at 4mm from case
A
A/us
°C
°C
°C
All dimensions in mm
THERMAL RESISTANCES
SYMBOL
Rth(j-i)
Rth(j-a)
PARAMETER
Junction-leads on infinite heatsink
Junction-ambient on printed circuit
L = 10mm
VALUE
20
75
UNIT
°C/W
°C/W
All parameters are tested using Fet Test ™ Model 3600
DEVICE
TYPE
T10B035
T10B065
T10B120
T10B140
T10B200
T10B230
T10B270
2
2
2
2
2
2
2
I
RM
@ V
RM
max
I
R
@ V
R
max
V
BO
@
I
BO
max
V
35
65
120
140
200
230
270
V
55
80
160
200
265
300
350
mA
800
800
800
800
800
800
800
I
H
min
mA
150
150
150
150
150
150
150
C
typ
pF
180
160
140
140
130
120
120
ORDERING INFORMATION
T10B
Voltage
Holding
Current Option
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
µ
A
V
32
55
110
120
170
200
230
µ
A
50
50
50
50
50
50
50
w w w. l i t t e l f u s e . c o m
55
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