T1220N24TOFVT
| Model | T1220N24TOFVT |
| Description | Silicon Controlled Rectifier, 2740A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element, |
| PDF file | Total 10 pages (File size: 285K) |
| Chip Manufacturer | INFINEON |
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1220N
Elektrische
T
Eigenschaften
= -40°C... T
vj
vj max
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
enndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
300 A
≤
i
T
≤
6100 A
on-state characteristic
T
vj
= 25 °C °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
T
C
= 85 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
V
DRM
,V
RRM
2000
2200
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TAVM
I
TRMS
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
2000
2200
2100
2300
2400
2600
2800
2400
2600
2800
2500
2700
2900
2625
V
V
V
V
V
V
V
V
V
A
T
vj
= +25°C... T
vj max
1220 A
1740 A
2740 A
25000 A
22500 A
3125 10³ A²s
2531 10³ A²s
150 A/µs
1000 V/µs
T
vj
= T
vj max
, i
T
= 3,5 kA
T
vj
= T
vj max
, i
T
= 1,0 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
max.
max.
2,13 V
1,38 V
1,0 V
0,275 mΩ
v
T
=
A
+
B
⋅
i
T
+
C
⋅
ln ( i
T
+
1)
+
D
⋅
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12V
9,687E-01
2,165E-04
-9,652E-03
8,131E-03
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
2 V
10 mA
5 mA
0,25 V
500 mA
2500 mA
200 mA
4,5 µs
T
vj
= 25°C, v
D
= 12V, R
GK
≥
10
Ω
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2008-09-19
1.0
IFBIP D AEC, 2008-09-19, H.Sandmann
A 54/08
Seite/page
1/10
