TZX8V2-C
| Model | TZX8V2-C |
| Description | Zener Diode, 8.2V V(Z), 2.41%, 0.5W, Silicon, Unidirectional, DO-35, |
| PDF file | Total 8 pages (File size: 95K) |
| Chip Manufacturer | TEMIC |
TZX...
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm,
T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 10-Mar-97
1 (8)
