U0408FC3.3C-T75-1
| Model | U0408FC3.3C-T75-1 |
| Description | Trans Voltage Suppressor Diode, 200W, 3.3V V(RWM), Bidirectional, 8 Element, Silicon, FLIP CHIP-8 |
| PDF file | Total 6 pages (File size: 73K) |
| Chip Manufacturer | PROTEC |
U0408FC3.3C
thru
U0408FC36C
DEVICE CHARACTERISTICS
MAXIMUM RATINGS
@ 25°C Unless Otherwise Specified
PARAMETER
Peak Pulse Power (tp = 8/20µs) - See Figure 1
Operating Temperature
Storage Temperature
SYMBOL
P
PP
T
A
T
STG
VALUE
250
-55 to 150
-55 to 150
UNITS
Watts
°C
°C
ELECTRICAL CHARACTERISTICS PER LINE
PART
NUMBER
(See Note 1)
RATED
STAND-OFF
VOLTAGE
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE
(See Fig. 2)
@ I
P
= 1A
V
C
VOLTS
7.0
9.8
13.4
19.0
24.0
43.0
64.0
@ 25°C Unless Otherwise Specified
MAXIMUM
CLAMPING
VOLTAGE
(See Fig. 2)
MAXIMUM
LEAKAGE
CURRENT
(See Note 2)
@V
WM
I
D
µA
75*
10**
10***
1
1
1
1
TYPICAL
CAPACITANCE
V
WM
VOLTS
U0408FC3.3C
U0408FC05C
U0408FC08C
U0408FC12C
U0408FC15C
U0408FC24C
U0408FC36C
3.3
5.0
8.0
12.0
15.0
24.0
36.0
@ 1mA
V
(BR)
VOLTS
4.0
6.0
8.5
13.3
16.7
26.7
40.0
@8/20µs
V
C
@ I
PP
12.5V @ 20A
14.7V @ 17A
19.2V @ 13A
29.7V @ 9.0A
35.7V @ 7.0A
55.0V @ 5.0A
84.0V @ 3.0A
@0V, 1 MHz
C
pF
150
100
75
50
40
30
25
Note 1:
All devices are bidirectional. Electrical characteristics apply in both directions.
Note 2:
*Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current <500nA @ 3.3V. ***Maximum leakage current <200nA @ 5V.
FIGURE 1
PEAK PULSE POWER VS PULSE TIME
10,000
I
PP
- Peak Pulse Current - % of I
PP
P
PP
- Peak Pulse Current - Watts
120
100
80
60
40
20
0
t
f
FIGURE 2
PULSE WAVE FORM
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
f
= 8µs
t
d
= 20µs
1,000
250W, 8/20µs Waveform
e
-t
100
t
d
= t I /2
PP
10
0.01
1
10
100
t
d
- Pulse Duration - µs
1,000
10,000
0
5
10
15
t - Time - µs
20
25
30
05161.R5 5/07
2
www.protekdevices.com
*U.S. Patent No. Des. “D456,367S”
