U1DL49
| Model | U1DL49 |
| Description | TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE |
| PDF file | Total 3 pages (File size: 124K) |
| Chip Manufacturer | TOSHIBA |
U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS
l
Repetitive Peak Reverse Voltage : V
RRM
= 200V
l
Average Forward Current
l
Low Forward Voltage
: I
F (AV)
= 1.0A
: V
FM
= 0.98V (Max)
l
Very Fast Reverse−Recovery Time : t
rr
= 60ns (Max)
l
Available to Reduce Switching Losses and Output Noise
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
200
1.0
15 (50Hz)
16.5 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.05g
MIN
―
―
―
―
―
TYP.
―
―
―
―
―
―
―
3−5E1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
(Note 1)
(Note 2)
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j−a)
TEST CONDITION
I
FM
= 1.0A
V
RRM
= 200V
I
F
= 1A, di / dt =
−20A
/ µs
I
F
= 1.0A
Junction to Ambient
MAX
0.98
10
60
100
125
UNIT
V
µA
ns
ns
°C / W
Note 1: t
rr
TEST CIRCUIT
Note 2: t
fr
TEST CIRCUIT
MARKING
WAVEFORM
WAVEFORM
CODE
RD
TYPE
U1DL49
1
2001-07-11
