U1ZB36(TE12L,Q)
| Model | U1ZB36(TE12L,Q) |
| Description | Trans Voltage Suppressor Diode |
| PDF file | Total 7 pages (File size: 228K) |
| Chip Manufacturer | TOSHIBA |
U1ZB6.8~U1ZB390
TOSHIBA ZENER DIODE
SILICON DIFFUSED TYPE
U1ZB6.8~U1ZB390
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Average Power Dissipation : P = 1.0 W
Zener Voltage
: V
Z
= 6.8 V to 390 V
Surface Mounting Plastic Mold Package
Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1.0
−40
to 150
−40
to 150
UNIT
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
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3−4D1A
STANDARD SOLDERING PAD
1
2011-01-05
