U20D10C-LF
| Model | U20D10C-LF |
| Description | Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-3P, 3 PIN |
| PDF file | Total 4 pages (File size: 43K) |
| Chip Manufacturer | WTE |
®
U20D05C – U20D60C
20A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Glass Passivated Die Construction
Superfast 35nS and 50nS Recovery Time
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
H
TO-3P
Dim
Min
Max
A
1.85
2.15
B
4.70
5.30
C
—
23.00
D
19.00
—
E
2.80
3.20
G
0.45
0.85
H
—
16.20
J
1.70
2.70
K
3.15 Ø
3.65 Ø
L
—
4.50
M
5.25
5.65
N
1.10
1.40
P
—
2.50
R
11.70
12.70
S
5.00
6.00
All Dimensions in mm
S
R
PIN1
2
3
J
K
P
N
L
Mechanical Data
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 1.2 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
M
A
B
C
PIN 1
PIN 2
Case
G
D
E
PIN 3
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Total Device
Per Diode
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
U20D
05C
50
35
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
U20D
10C
100
70
U20D
15C
150
105
U20D
20C
200
140
20
10
200
0.975
10
500
35
120
40
1.5
-55 to +150
50
70
1.3
1.7
U20D
30C
300
210
U20D
40C
400
280
U20D
50D
500
350
U20D
60C
600
420
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage per diode
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
Operating and Storage Temperature Range
@I
F
= 10A
@T
C
= 25°C
@T
C
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
J
R
θJA
R
θJC
T
J
, T
STG
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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