U20GL2C48A
| Model | U20GL2C48A |
| Description | TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
| PDF file | Total 2 pages (File size: 87K) |
| Chip Manufacturer | TOSHIBA |
U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
U20GL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
l
Repetitive Peak Reverse Voltage
l
Average Output Rectified Current
l
Ultra Fast Reverse−Recovery Time
: V
RRM
= 400V
: I
O
= 20A
: t
rr
= 35ns (Max)
Unit: mm
l
Low Switching Losses and Output Noise.
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
400
20
100 (50Hz)
110 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
12−10D2A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j−c)
I
FM
= 10A
V
RRM
= 400V
I
F
= 2A, di / dt =
−50A
/ µs
I
F
= 1A
DC Total, Junction to Case
TEST CONDITION
MIN
―
―
―
―
―
TYP.
―
―
―
―
―
MAX
1.8
50
35
100
1.6
UNIT
V
µA
ns
ns
°C / W
Note: V
FM
, I
RRM
, t
rr
, t
fr
········ A value of one cell.
POLARITY
MARKING
*1
MARK
A
20GL2C
*
2
*
3
1
2001-07-11
