U20GL2C53A
| Model | U20GL2C53A |
| Description | TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| PDF file | Total 4 pages (File size: 129K) |
| Chip Manufacturer | TOSHIBA |
U20GL2C53A
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th (j-c)
Test Condition
I
FM
=
10 A
V
RRM
=
400 V
I
F
=
2 A, di/dt
= -50
A/ms
DC Total, Junction to Case
Min
¾
¾
¾
¾
Typ.
¾
¾
¾
¾
Max
1.8
50
35
1.5
Unit
V
mA
ns
°C/W
Note: V
FM
, I
RRM
, t
rr
: A value of one cell.
Marking
※1
※2
※1
※2
※3
※3
A
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
MARK
20GL2C
TYPE
U20GL2C53A
Standard Soldering Pad
8.0
unit: mm
2.5
2.0
3.2
3.8
2.0
2.0
6.0
2
2003-02-17
