U2320B-FLG3
| Model | U2320B-FLG3 |
| Description | VHF/UHF Tuner-IC |
| PDF file | Total 7 pages (File size: 153K) |
| Chip Manufacturer | TEMIC |
U2320B
Electrical Characteristics
Test conditions (unless otherwise specified): Vs = 12 V, T
amb
= 25
°
C,
reference point Pin 2, referred to test circuit page 5.
Parameters
Supply voltage
Supply current
Band switch
Voltage band A
Voltage band B
Switching current
SAW filter driver
Input impedance
Output impedance
Voltage gain
Band A (note 1)
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
Input level for (note 3):
IM3 (Interm. of 3rd order)
IM2 (Interm. of 2nd order)
Band B (note 1)
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
Test Conditions / Pins
Pin 13-15
Pin 13-15
Pin 8
Pin 8
Pin 8
Pin 11, 12
Pin 9, 10
11, 12
→
9, 10
Pin18
Pin18
I/P to O/P
I/P to O/P
Symbol
V
S
I
S
VSWA
VSWB
ISW
ZiSAW
ZoSAW
GvSAW
fiA
S11A
GA
NF
48
30
11.5
12
–22
–22
470
34
10.5
11.5
–27
860
Min.
10.8
Typ.
12.0
42
0
4.0
Max.
13.2
50
1.0
5.0
100
Unit
V
mA
V
V
m
A
0
3.4
VSW = 5 V
fi = 36 MHz
450
70
19
470
W
W
dB
MHz
dB
dB
dB
dBm
dBm
MHz
dB
dB
dB
dBm
Figure 4
fiA = 50 MHz
fiA = 150 MHz
Each carrier
fiA = 71 MHz I/P
fiA = 71 MHz I/P
ViA
ViA
fiB
S11B
GB
NF
Figure 4
fiB = 500 MHz
fiB = 800 MHz
Input level for IM3
p
Each carrier
(Interm. of 3rd order, note 3) fiB = 600 MHz I/P
Notes
1)
2)
3)
4
)
Pin 16, 17
Pin 16, 17
I/P to O/P
I/P to O/P
ViB
The RF input B is symmetrical driven by means of a hybrid for 180
°
phase shifting, consequently the source
impedance is 100
W
. All other impedance for RF tests is 50
W
.
The noise figure (NF) is the value for double-side-band measurement.
The intermodulation test (2-carrier-method) which is made on IF-centre
is in reference to a signal-to-IM ratio of 60 dB.
Gain is the ratio of the voltage at the primary coil of L5 to the available voltage at the input.
TELEFUNKEN Semiconductors
Rev. A1, 29-May-96
3 (7)
