U2705
| Model | U2705 |
| Description | HEXFET POWER MOSFET |
| PDF file | Total 10 pages (File size: 194K) |
| Chip Manufacturer | IRF |
IRLR/U2705
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
10
2.5V
1
1
2.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25°C
1
10
100
A
0.1
0.1
20µs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 27A
I
D
, Drain-to-Source Current (A)
2.5
100
T
J
= 25°C
T
J
= 175°C
2.0
10
1.5
1.0
1
0.5
0.1
2
3
4
5
6
V
DS
= 25V
20µs PULSE WIDTH
7
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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