U5ZA27C
| Model | U5ZA27C |
| Description | TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE |
| PDF file | Total 4 pages (File size: 130K) |
| Chip Manufacturer | TOSHIBA |
U5ZA27(Z),U5ZA27C
TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE
U5ZA27(Z),U5ZA27C
BEST SUITED FOR OVERVOLTAGE PROTECTION OF
ELECTRONICSYSTEM :
ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES
ELECTRONIC SYSTEM FOR COMMERCIAL USE
ELECTRONIC SYSTEM FOR INDUSTRIAL USE
FOR COMMUNICATIONS, CONTROLS, MEASURING
INSTRUMENTS, ETC.
l
High surge power withstanding capabilities that absorb load dump surge.
l
Excellent surge responsibility for steep surge absorption.
l
Surface mount type is available for easy applications. Axial lead type is
also available.
l
Corresponds to taping packages.
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Allowable power dissipation (Note 1)
Non-repetitive peak reverse surge
current
(See Fig.1 for the exponents.)
Junction temperature
Storage temperature
SYMBOL
P
I
RSM
T
j
T
stg
RATINGS
5
62
−40~150
−40~150
UNIT
W
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.5 g
―
―
3−11J2A
Note 1: Lead tip temperature T
L
= 25°C
Fig.1
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Type No.
Min
U5ZA27(Z) / C
24.0
Zener voltage
V
Z
[V]
(I
Z
= 10 mA)
Typ.
27
Max
30.0
Operating resistance
r
d
[Ω]
(I
Z
= 10 mA)
Max
30
Temperature
coefficient
α
T
[mV / °C]
(I
Z
= 10 mA)
Typ.
Max
23
36
Forward voltage
V
F
[V]
(I
F
= 6 A)
Max
1.2
Reverse current
I
R
[µA]
(V
R
= 22 V)
Max
10
1
2001-07-11
