U633H04SK25G1
| Model | U633H04SK25G1 |
| Description | Non-Volatile SRAM, 512X8, 25ns, CMOS, PDSO24, 0.300 INCH, SOP-24 |
| PDF file | Total 13 pages (File size: 201K) |
| Chip Manufacturer | SIMTEK |
U633H04
PowerStore
512 x 8 nvSRAM
Features
Description
The U633H04 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U633H04 is a fast static RAM
(25 ns), with a nonvolatile electri-
cally erasable PROM (EEPROM)
element incorporated in each static
memory cell. The SRAM can be
read and written an unlimited num-
ber of times, while independent
nonvolatile
data
resides
in
EEPROM.
Data transfers from the SRAM to
the EEPROM (the STORE opera-
tion) take place automatically upon
power down using charge stored in
an external 100
µF
capacitor.
Transfers from the EEPROM to the
SRAM (the RECALL operation)
take place automatically on power
up.
The U633H04 combines the high
performance and ease of use of a
fast SRAM with nonvolatile data
integrity.
STORE cycles also may be initiated
under user control via a single pin
(HSB).
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvolatile
information is transferred into the
SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
F
High-performance CMOS non-
volatile static RAM 512 x 8 bits
F
25 ns Access Time
F
12 ns Output Enable Access Time
F
I = 15 mA at 200 ns Cycle Time
F
Unlimited Read and Write to
SRAM
F
Automatic STORE to EEPROM
CC
F
F
F
F
F
F
F
F
F
F
F
F
on Power Down using external
capacitor
Hardware initiated STORE
(STORE Cycle Time < 10 ms)
Automatic STORE Timing
10
5
STORE cycles to EEPROM
10 years data retention in
EEPROM
Automatic RECALL on Power Up
Unlimited RECALL cycles from
EEPROM
Single 5 V ± 10 % Operation
Operating temperature ranges:
0 to 70
°C
-40 to 85
°C
CECC 90000 Quality Standard
ESD characterization according
MIL STD 883C M3015.7-HBM
Package: SOP24 (300 mil)
Pin Configuration
Pin Description
VCAP
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
VCCX
HSB
A7
W
G
A8
E
DQ7
DQ6
DQ5
DQ4
DQ3
Signal Name
A0 - A8
DQ0 - DQ7
E
G
W
VCCX
VSS
VCAP
HSB
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
Capacitor
Hardware Store/Busy
SOP
18
17
16
15
14
13
Top View
August 07, 1998
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