VCR7N
| Model | VCR7N |
| Description | N-Channel Silicon Voltage Controlled Resistor JFET |
| PDF file | Total 1 pages (File size: 63K) |
| Chip Manufacturer | INTERFET |
C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
¥
¥
¥
¥
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
VCR2N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
20
60
7.5
7.5
V
(BR)GSS
I
GSS
V
GS(OFF)
–1
NJ72
Min
– 15
–5
– 3.5
Max
VCR4N
NJ16
Min
– 15
– 0.2
– 3.5
–7
Max
Unit
V
nA
V
Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
I
D
= – 1 µA, V
DS
= 10V
200
600
3
3
Ω
pF
pF
V
GS
= ØV, I
D
= ØA
V
DG
= 10V, I
S
= ØA
V
DG
= 10V, I
D
= ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
VCR7N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
4000
8000
1.5
1.5
Ω
pF
pF
V
GS
= ØV, I
D
= ØA
V
DG
= 10V, I
S
= ØA
V
DG
= 10V, I
D
= ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
V
(BR)GSS
I
GSS
V
GS(OFF)
– 2.5
NJ01
Min
– 15
– 0.1
–5
Max
Unit
V
nA
V
Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
I
D
= – 1 µA, V
DS
= 10V
VCR2N & VCR4N
TOÐ18 Package
See Section G for Outline Dimensions
VCR7N
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
