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W27E040P-12

W27E040P-12

Model W27E040P-12
Description 512K X 8 ELECTRICALLY ERASABLE EPROM
PDF file Total 15 pages (File size: 175K)
Chip Manufacturer WINBOND
W27E040
512K
×
8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 524288
×
8 bits that operates on a single 5 volt power supply. The W27E040
provides an electrical chip erase function.
FEATURES
High speed access time:
90/120 nS (max.)
Read operating current: 15 mA (typ.)
Erase/Programming operating current
15 mA (typ.)
Standby current: 5
µA
(typ.)
Single 5V power supply
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 32-pin 600 mil DIP, 450
mil SOP, PLCC and TSOP
PIN CONFIGURATIONS
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
BLOCK DIAGRAM
V
CC
A18
A17
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
CE
OE
CONTROL
OUTPUT
BUFFER
Q0
.
.
Q7
32-pin
DIP
26
25
24
23
22
21
20
19
18
17
A0
.
.
A18
VCC
GND
VPP
DECODER
CORE
ARRAY
A
1
2
4
A7
A6
A5
A4
A3
A2
A1
A0
Q0
5
6
7
8
9
10
11
12
13
A
1
5
3
A
1
6
2
V V
P C
P C
1
A
1
8
A
1
7
32 31 30
29
28
27
A14
A13
A8
A9
A11
OE
A10
CE
Q7
32-pin
PLCC
26
25
24
23
22
21
PIN DESCRIPTION
SYMBOL
A0−A18
32
31
30
29
28
27
26
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
14 15 16 17 18 19 20
Q
1
Q
2
G
N
D
Q
3
Q
4
Q
5
Q
6
A11
A9
A8
A13
A14
A17
A18
V
CC
V
PP
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
A3
Q0−Q7
CE
OE
V
PP
V
CC
GND
NC
32-pin
TSOP
25
24
23
22
21
20
19
18
17
-1-
Publication Release Date: May 1997
Revision A1
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