W29EE011T-90
| Model | W29EE011T-90 |
| Description | 128K X 8 CMOS FLASH MEMORY |
| PDF file | Total 20 pages (File size: 183K) |
| Chip Manufacturer | WINBOND |
W29EE011
128K
×
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
•
•
Single 5-volt program and erase operations
Fast page-write operations
−
128 bytes per page
−
Page program cycle: 10 mS (max.)
−
Effective byte-program cycle time: 39
µS
−
Optional software-protected data write
•
Low power consumption
−
Active current: 25 mA (typ.)
−
Standby current: 20
µA
(typ.)
•
•
Automatic program timing with internal V
PP
generation
End of program detection
−
Toggle bit
−
Data polling
•
•
•
•
•
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
•
•
•
•
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
-1-
Publication Release Date: July 1999
Revision A12
