W29EE512Q-70B
| Model | W29EE512Q-70B |
| Description | 64K X 8 CMOS FLASH MEMORY |
| PDF file | Total 22 pages (File size: 291K) |
| Chip Manufacturer | WINBOND |
W29EE512
64K
×
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
×
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
•
Single 5-volt program and erase operations
•
Fast page-write operations
•
Low power consumption
−
Active current: 50 mA (max.)
−
Standby current: 100
µA
(max.)
•
Automatic program timing with internal V
PP
−
128 bytes per page
−
Page program cycle: 10 mS (max.)
−
Effective byte-program cycle time: 39
µS
−
Optional software-protected data write
•
Fast chip-erase operation: 50 mS
•
Read access time: 70/90/120 nS
•
Typical page program/erase cycles: 1K/10K
•
Ten-year data retention
•
Software and hardware data protection
generation
•
End of program detection
−
Toggle bit
−
Data polling
•
Latched address and data
•
TTL compatible I/O
•
JEDEC standard byte-wide pinouts
•
Available packages: 32-pin PLCC, TSOP and
VSOP
-1-
Publication Release Date: February 18, 2002
Revision A7
