W3E64M16S-333NBM
| Model | W3E64M16S-333NBM |
| Description | DDR DRAM, 64MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| PDF file | Total 17 pages (File size: 493K) |
| Chip Manufacturer | MICROSEMI |
White Electronic Designs
64Mx16 DDR SDRAM
FEATURES
DDR SDRAM rate = 200, 250, 266, 333**
Package:
• 60 Plastic Ball Grid Array (PBGA),
10mm x 12.5mm x 1.5mm
1Gb upgrade to 512Mb 60 FBGA SDRAM
2.5V ±0.2V core power supply
2.5V I/O (SSTL_2 compatible)
Differential clock inputs (CK and CK#)
Commands entered on each positive CK
edge
Internal pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Programmable Burst length: 2,4 or 8
Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (one per byte)
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
DLL to align DQ and DQS transitions with CLK
Four internal banks for concurrent operation
Data mask (DM) pins for masking write data
(one per byte)
Auto precharge option
Auto Refresh and Self Refresh Modes
Commercial, Industrial and Military
TemperatureRanges
Organized as 64M x 16
Weight: W3E64M16S-XSBX — 1.0 grams typical
W3E64M16S-XNBX
BENEFITS
53% SPACE SAVINGS vs. 1-1GbTSOP
• 50% Space Savings vs 2 - 512Mb FPBGA
Reduced part count
50% I/O reduction vs FPBGA
• 9% I/O reduction vs TSOP
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
GENERAL DESCRIPTION
The 128MByte (1Gb) DDR SDRAM is a high-speed CMOS,
dynamic random-access, memory using 2 chips containing
536,870,912 bits. Each chip is internally configured as a
quad-bank DRAM.
The 128MB DDR SDRAM uses a double data rate
ar chi tec ture to achieve high-speed operation. The
double data rate architecture is essentially a 2n-prefetch
architecture with an interface designed to transfer two data
words per clock cycle at the I/O pins. A single read or write
access for the 256MB DDR SDRAM effectively consists of
a single 2n-bit wide, one-clock-cycle data transfer at the
internal DRAM core and two corresponding n-bit wide,
one-half-clock-cycle data transfers at the I/O pins.
A bi-directional data strobe (DQS) is transmitted externally,
along with data, for use in data capture at the receiver.
strobe transmitted by the DDR SDRAM during READs and
by the memory controller during WRITEs. DQS is edge-
aligned with data for READs and center-aligned with data
for WRITEs. Each chip has two data strobes, one for the
lower byte and one for the upper byte.
The 128MB DDR SDRAM operates from a differential clock
(CK and CK#); the crossing of CK going HIGH and CK
going LOW will be referred to as the positive edge of CK.
Commands (address and control signals) are registered
at every positive edge of CK. Input data is registered on
both edges of DQS, and output data is referenced to both
edges of DQS, as well as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst
oriented; accesses start at a selected location and continue
for a programmed number of locations in a programmed
* This product is subject to change without notice.
**
For 333Mbs operation of Industrial temperature CL = 2.5, at Military temperature
CL = 3.
May 2008
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
