W3EG264M72EFSU262D4S
| Model | W3EG264M72EFSU262D4S |
| Description | DDR DRAM Module, 128MX72, 0.75ns, CMOS, SO-DIMM-200 |
| PDF file | Total 12 pages (File size: 210K) |
| Chip Manufacturer | MICROSEMI |
White Electronic Designs
W3EG264M72EFSUxxxD4
ADVANCED*
1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
FEATURES
Fast data transfer rate: PC-2100, PC-2700 and
PC3200
Clock speeds of 133 MHz, 166 MHz and 200MHz
Supports ECC error detection and correction
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 3 and 4 (clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect (SPD) with EEPROM
Dual Rank
V
CC
= V
CCQ
= +2.6V (200MHz)
V
CC
= V
CCQ
= +2.5V (133 and 166MHz)
Gold edge contacts
JEDEC standard 200 pin, small-outline, SO-DIMM
package
•
PCB height option:
31.75 mm (1.25”)
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
The W3EG264M72EFSU is a 2x64Mx72 Double Data
Rate SDRAM memory module based on 512Mb DDR
SDRAM components. The module consists of eighteen
64Mx8 DDR SDRAMs in FBGA packages mounted on a
200 pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR400@CL=3
Clock Speed
CL-t
RCD
-t
RP
200MHz
3-3-3
DDR333@CL=2.5
166MHz
2.5-3-3
DDR266@CL=2
133MHz
2-2-2
DDR266@CL=2.5
133MHz
2.5-3-3
September 2004
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
