W3EG6462S335D3F
| Model | W3EG6462S335D3F |
| Description | DRAM, |
| PDF file | Total 12 pages (File size: 195K) |
| Chip Manufacturer | WEDC |
White Electronic Designs
W3EG6462S-D3
ADVANCED*
512MB – 2x32Mx64 DDR SDRAM UNBUFFERED
FEATURES
Double-data-rate architecture
DDR200, DDR266, DDR333 and DDR400
• JEDEC design specified
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Power supply:
• V
CC
= V
CCQ
= +2.5V ±0.2V (100, 133 and 166
MHz)
• V
CC
= V
CCQ
= +2.6V ±0.1V (200 MHz)
Standard 184 pin DIMM package
• PCB height: 30.48 (1.20") MAX
NOTE: Consult factory for availability of:
• Lead-free products
• Vendor source control option
• Industrial temperature option
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
The W3EG6462S is a 2x32Mx64 Double Data Rate
SDRAM memory module based on 256Mb DDR SDRAM
components. The module consists of sixteen 32Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184 pin
FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
OPERATING FREQUENCIES
Clock Speed
CL-t
RCD
-t
RP
DDR400 @CL=3
200MHz
3-3-3
DDR333 @CL=2.5 DDR266 @CL=2.5
166MHz
133MHz
2.5-3-3
2-3-3
DDR266 @CL=2
133MHz
2-3-3
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
January 2005
Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
