W3H64M16E-400BI
| Model | W3H64M16E-400BI |
| Description | DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA79, 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79 |
| PDF file | Total 28 pages (File size: 1M) |
| Chip Manufacturer | MICROSEMI |
W3H64M16E-XBX
128MB – 64M x 16 DDR2 SDRAM 79 PBGA
FEATURES
Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s
Package:
• 79 Plastic Ball Grid Array (PBGA), 11 x 14mm
• 1.27mm pitch
Supply Voltage = 1.8V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with clock
signal
Eight internal banks for concurrent operation
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 3, 4, 5, 6, or 7
Posted CAS additive latency: 0, 1, 2, 3, 4, 5, or 6
Write latency = Read latency - 1* t
CK
Commercial, Industrial and Military Temperature Ranges
Organized as 64M x 16
Weight: W3H64M16E-XBX - TBD
BENEFITS
Larger ball pitch for higher reliability
Pinout compatible with 2-Rank Version
Upgradeable to 128M x 16 density (contact factory for
information)
* This product is subject to change without notice.
TYPICAL APPLICATION
RAM
Host
FPGA/
Processor
DDR2/DDR3
W3X128M72-XBI
SSD (SLC)
MSM32/MSM64 (SATA BGA)
W7N16GVHxxBI (PATA BGA)
n)
M512/M256/M128 (SATA, 2.5in)
Microsemi Corporation reserves the right to change products or specifications without notice.
December 2013
Rev. 9
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
