W49L201S-90
| Model | W49L201S-90 |
| Description | 256K X 8 CMOS FLASH MEMORY |
| PDF file | Total 23 pages (File size: 190K) |
| Chip Manufacturer | WINBOND |
Preliminary W49L201
128K
×
16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W49L201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
•
Single 3.3-volt operations:
−
3.3-volt Read/Erase/Program
Fast Program operation:
−
Word-by-Word programming: 50
µS
(max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
Sector configuration
−
One 8K words Boot Block with lockout
protection
−
Two 8K words Parameter Blocks
−
One 104K words (208K bytes) Main Memory
Array Blocks
•
Low power consumption
−
Active current: 15 mA (typ.)
−
Standby current: 10
µA
(typ.)
•
•
•
•
•
•
•
•
•
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
−
Toggle bit
−
Data polling
•
•
•
•
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
-1-
Publication Release Date: May 2000
Revision A1
