X00602MA2AL2
| Model | X00602MA2AL2 |
| Description | 0.8A SCRs |
| PDF file | Total 5 pages (File size: 76K) |
| Chip Manufacturer | STMICROELECTRONICS |
X00602MA
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
0.65
0.60
α
= 180°
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0
0.1
Fig. 2-1:
Average and D.C. on-state current
versus lead temperature.
IT(av)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
D.C.
α
= 180°
360°
IT(av)(A)
0.2
0.3
0.4
α
Tlead(°C)
0
25
50
75
100
125
0.5
0.6
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
IT(av)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
1.00
D.C.
α
= 180°
0.10
Tamb(°C)
0
25
50
75
100
125
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
Tj(°C)
40
60
80
100
120
140
IGT
IH & IL
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1k
Ω
]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
1E-1
Rgk(k
Ω
)
1E+0
1E+1
1E+2
3/5
