X00602MA5AL2
| Model | X00602MA5AL2 |
| Description | 0.8A SCRs |
| PDF file | Total 5 pages (File size: 76K) |
| Chip Manufacturer | STMICROELECTRONICS |
X00602MA
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1k
Ω
]
1E+2
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical
values).
dV/dt[Cgk]/dV/dt[Rgk=1k
Ω
]
20
10
1E+1
1E+0
5
1E-1
2
Rgk(k
Ω
)
1E-2
1E-2
1E-1
1E+0
1E+1
1
1
2
Cgk(nF)
5
10
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A),I
2
t(A
2
s)
100.0
ITSM
Tj initial = 25 °C
10
9
8
7
6
5
4
3
2
1
0
ITSM(A)
tp=10ms
Onecycle
Nonrepetitive
Tjinitial=25°C
Repetitive
T
amb=25°C
10.0
1.0
Number of cycles
tp(ms)
0.1
0.01
0.10
1.00
I
2
t
1
10
100
1000
10.00
Fig. 10:
On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 0.85V
Rd = 245mΩ
1E+0
Tj = Tjmax.
Tj = 25°C
1E-1
VTM(V)
1E-2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4/5
