X0202MA-5BA4
| Model | X0202MA-5BA4 |
| Description | 1.25A SCRs |
| PDF file | Total 6 pages (File size: 151K) |
| Chip Manufacturer | STMICROELECTRONICS |
X02 Series
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
IT(av)(A)
SOT-223
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
SOT-223
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TO-92
0.10
SOT-223
TO-92
Tamb(°C)
0
25
50
75
100
125
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40
-20
0
20
40
60
80
100
120 140
Ω
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IH[Rgk] / IH[Rgk = 1 kΩ]
Tj = 25°C
Rgk(kΩ)
1E-1
1E+0
1E+1
0.0
1E-2
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0
dV/dt[Rgk]/dV/dt [Rgk=1kΩ]
Tj = 125°C
VD = 0.67xVDRM
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k
Ω
]
20
18
16
14
12
10
8
6
4
2
0
1.0
0.1
0.0
Rgk(kΩ)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Cgk(nF)
0
2
4
6
8
10
12
14
16
18
20
22
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