Z00607DA1BA2
| Model | Z00607DA1BA2 |
| Description | SENSITIVE GATE TRIACS |
| PDF file | Total 4 pages (File size: 67K) |
| Chip Manufacturer | STMICROELECTRONICS |
Z00607DA / Z00607MA
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to lead
Parameter
Value
150
60
Unit
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 0.1 W P
GM
= 2 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
V
GT
V
GD
tgt
Test Conditions
V
D
=12V (DC) R
L
=140Ω
V
D
=12V (DC) R
L
=140Ω
V
D
=V
DRM
R
L
=3.3kΩ
V
D
=V
DRM
I
G
= 25mA
I
T
= 1.0A
dI
G
/dt = 0.25A/µs
I
T
= 200 mA Gate open
I
G
= 1.2 I
GT
I
TM
= 1.1A tp= 380µs
V
D
= V
DRM
V
R
= V
RRM
VD=67%V
DRM
Gate open
(dI/dt)c = 0.35 A/ms
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 25°C
Quadrant
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
MAX
MAX
MAX
MIN
TYP
Sensitivity
07
5
7
1.5
0.2
2
V
V
µs
Unit
mA
I
GM
= 1 A (tp = 20
µs)
I
H
*
I
L
V
TM
*
I
DRM
I
RRM
dV/dt *
(dV/dt)c *
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
I-III-IV
II
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
5
10
20
1.5
10
0.1
10
1.5
mA
mA
V
µA
mA
V/µs
V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
Fig 1:
Maximum power dissipation versus RMS
on-state current.
Fig 2:
Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tlead).
P(W)
Tlead (°C)
50
Rth(j-l)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
α=30°
0.1
0.0
0.0
0.1
α=180°
α=120°
α=90°
α=60°
180°
α
α
IT(RMS)(A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
70
Rth(j-a)
90
α=180°
Tamb(°C)
0
10 20 30 40 50 60 70 80 90 100 110
110
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