Z0103MA
| Model | Z0103MA |
| Description | Triacs |
| PDF file | Total 12 pages (File size: 249K) |
| Chip Manufacturer | PHILIPS |
Philips Semiconductors
Z0103/07/09 series
Triacs
3. Ordering information
3.1 Ordering options
Table 2:
Z0103MA
Z0103NA
Z0107MA
Z0107NA
Z0109MA
Z0109NA
Z0103MN
Z0103NN
Z0107MN
Z0107NN
Z0109MN
Z0109NN
Ordering information
Voltage (V
DRM
)
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
Gate Sensitivity (I
GT
)
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
Package
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
Part Number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DRM
repetitive peak off-state voltage
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
V
RRM
repetitive peak reverse voltage
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
°C
prior to surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
I
T(RMS)
RMS on-state current
SOT223
SOT54B (TO-92)
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
9397 750 10102
Conditions
25
°C ≤
T
j
≤
125
°C
Min
-
-
Max
600
800
600
800
Unit
V
V
V
V
25
°C ≤
T
j
≤
125
°C
-
-
-
-
-
-
-
-
-
-
-
−40
−40
8
8.5
1
1
0.35
20
1.0
2.0
0.1
+150
+125
A
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
2 of 12
all conduction angles;
Figure 4
T
sp
= 90
°C
T
lead
= 50
°C
t
=
10 ms
I
TM
= 1.0 A; I
G
= 2 x I
GT
; dI
G
/dt = 100 mA/µs
t
p
= 20
µs
over any 20 ms period
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
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