Z0107NA1AA2
| Model | Z0107NA1AA2 |
| Description | 1A TRIACS |
| PDF file | Total 8 pages (File size: 79K) |
| Chip Manufacturer | STMICROELECTRONICS |
Z01
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
1.50
1.25
1.00
0.75
0.50
0.25
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
1.2
R
th(j-a)
= R
th(j-t)
(SOT-223)
1.0
0.8
R
th(j-a)
= R
th(j-l)
(TO-92)
0.6
0.4
0.2
I
T(RMS)
(A)
0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
amb
(°C)
0.0
0
25
50
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (full cycle)
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
R
th(j-a)
= 150°C/W
(TO-92)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th(j-a)
/R
th(j-a)]
1.00
R
th(j-a)
= 60°C/W
(SOT-223)
Z01xxA
0.10
Z01xxN
T
l
or T
tab
(°C)
0.0
0
25
50
75
100
125
t
p
(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
=25°C]
2.5
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
9
8
t=20ms
2.0
7
6
Non repetitive
T
j
initial = 25°C
One cycle
1.5
I
GT
5
4
3
Repetitive
T
amb
= 25°C
1.0
I
H
& I
L
0.5
2
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
1
0
1
Number of cycles
10
100
1000
3/8
