ZC2812E
| Model | ZC2812E |
| Description | DUAL SCHOTTKY BARRIER DIODES |
| PDF file | Total 1 pages (File size: 54K) |
| Chip Manufacturer | ZETEX |
SOT23 DUAL SCHOTTKY
BARRIER DIODES
ISSUE 3 - NOVEMBER 1995
7
1
1
ZC2812E
ZC2813E
1
3
2
2
3
3
2
ZC2813E
Common Anode
13E
ZC2812E
Series
12E
SOT23
Device
Type
Part Marking
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Forward Current
Capacitance
Effective Minority Lifetime (1)
SYMBOL MIN.
V
BR
I
R
V
F
I
F
C
T
τ
TYP.
MAX. UNIT
V
100
410
nA
mV
mA
1.2
100
pF
ps
CONDITIONS.
I
R
=10
µ
A
V
R
=10V
I
F
=1mA
V
F
=1V
V
R
=0 V, f=1MHz
f= 54 MHz, I
pk
=20mA
15
20
(1) Sample Test.
For typical characteristics graphs see ZC2811E datasheet.
3 - 315
