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Micro Alliance DC-DC Boost IC ME2109FM5G SOT23-5

  • Model
    ME2109FM5G
  • Brand
    微盟
  • Dc
    2020+
  • 10+ pcs
    $ 1000
  • 20+ pcs
    $ 990
  • 50+ pcs
    $ 900

* Prices may fluctuate, please ask factory personnel for details.

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Hangzhou Weeqoo Electronics Market Co.

China
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  • Product Information
  • Company Information
    Overview
    Model ME2109FM5G
    Pack SOT-23
    Brand 微盟
    Dc 2020+
    Detailed description

    Manufacturer: Micron Technology 
    Product Type: Dynamic Random Access Memory 
    Mounting Style: SMD/SMT 
    Package / Case: FBGA-96 
    Series: MT41K 
    Trademark: Micron  
    Product Type: DRAM  
    Sub Category: Memory & Data Storage

    DRAM, which translates to "Dynamic Random Memory", can only hold data for a very short period of time. In order to maintain data, DRAM must be refreshed at regular intervals. DRAM is used for general data access. It is often said how big the memory is, mainly referring to the capacity of DRAM

    SDRAM stands for SynchronousDynamicRandomAccessMemory, which translates to synchronous memory. Dynamic random access memory is characterized by synchronization with the external frequency. Dynamic random access memory works under the control of memory pulses, eliminating the waiting time for memory access (because the memory operating frequency is the same as the system external frequency, unlike EDODRAM and FPMDRAM which need to wait for a number of clock cycles for memory access), reducing the delay time for data transfer and thus improving system performance.

     

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