STB15810 MOSFET N-channel 100 V, 3.4 mΩ typ., 110 A
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ModelSTB15810
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BrandST
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Dc21+
* Prices may fluctuate, please ask factory personnel for details.
Introduction: 100% Brand new and original manufacturer in stock
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China
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| Model | STB15810 |
| Pack | D2PKA |
| Brand | ST |
| Dc | 21+ |
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low
on-state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching
VDS Drain-source voltage 100 V
VGS Gate- source voltage ±20 V
ID Drain current (continuous) at TC = 25 °C 110 A
ID Drain current (continuous) at TC = 100 °C 110 A
IDM (1) Drain current (pulsed) TC = 25 °C 440 A
PTOT Total dissipation at TC = 25 °C 250 W
EAS(2) Single pulse avalanche energy 495 mJ
TJ Operating junction temperature range
-55 to 175 °C
Tstg Storage temperature range
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