STGB15M65DF2 TRENCH GATE FIELD-STOP IGBT M SE

Model

STGB15M65DF2
Brand

ST
Dc

/
10+ pcs

$ 1.89
100+ pcs

$ 1.56
500+ pcs

$ 1.13

* Prices may fluctuate, please ask factory personnel for details.

Introduction: Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R

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Selead Chip Electronics (Hong Kong)Co., Limited

China

zona@gjxcic.com

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+86 13670032368

Product Information
Company Information

Overview

Model	STGB15M65DF2
Pack	TO-263

Brand	ST
Dc	/

Detailed description

Features

6 μs of short-circuit withstand time

VCE(sat)= 1.55 V (typ.) @ IC= 15 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Applications

Motor control

UPS

PFC

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.

Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation

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