STGWT60H65DFB Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube

This powerful and secure STGWT60H65DFB IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 650 V.

In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube.

This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.