STGW30M65DF2 Trans IGBT Chip N-CH 650V 60A 258000mW

Model

STGW30M65DF2
Brand

ST
Dc

/
10+ pcs

$ 4.68
100+ pcs

$ 4.1
500+ pcs

$ 3.58

* Prices may fluctuate, please ask factory personnel for details.

Introduction: Trans IGBT Chip N-CH 650V 60A 258000mW 3Pin(3+Tab) TO-247 Tube

ICMoment Certification

Selead Chip Electronics (Hong Kong)Co., Limited

China

zona@gjxcic.com

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+86 13670032368

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Overview

Model	STGW30M65DF2
Pack	TO-247

Brand	ST
Dc	/

Detailed description

Features
-6 us of minimum short-circuit withstand time
-VcE(sat) = 1.55 V (typ.) @ lc = 30 A
-Tight parameters distribution
-Safer paralleling
-Low thermal resistance
-Soft and very fast recovery antiparallel diode

Applications
-Motor control
-UPS
-PFC

Description
These devices are IGBTs developed using anadvanced proprietary trench gate field-stopstructure.

These devices are part of the M seriesof IGBTs, which represent an optimumcompromise in performance to maximize theefficiency of inverter systems where low-loss andshort-circuit capability are essential.

Furthermorea positive Vcesat) temperature coefficient and tightparameter distribution result in safer parallelingoperation

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