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- Model
- Brand
- Package / DC
- Qty
- Instruction
- Company Info
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SI2319CDS-T1-GE3
Spot Stock Inquiry - Vishay(威世)
- N/A / 23+
- 4000
- --
-
SI2319CDS-T1-GE3
Order Stock Inquiry - MICROCHIP
- LQFP-44 / 23+
- 6000
- --
-
SI2319CDS-T1-GE3
Order Stock Inquiry - MICROCHIP
- LQFP-44 / 23+
- 6000
- --
-
SI2319CDS-T1-GE3
Order Stock Inquiry - MICROCHIP
- LQFP-44 / 23+
- 6000
- --
-
SI2319CDS-T1-GE3
Order Stock Inquiry - MICROCHIP
- LQFP-44 / 23+
- 6000
- --
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- SOT-23 / 22+
- 12320
- --
-
SI2319CDS-T1-GE3
Inquiry - VIS
- / 2317+
- 273
- --
-
SI2319CDS-T1-GE3
Inquiry - Vishay
- SOT-23(SOT-23-3) / 2022+
- 50000
- --
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- SOT-23 / 22+
- 2500
- --
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weiku Information Technology Co., LTDChina+86 13588313025+86 0571-85317607
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317500
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13552259951+86 0571-85317607
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13645678901+86 0571-85317500
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 12345678901+86 0571-85317500
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 0571-85317605
-
SI2319CDS-T1-GE3
Inquiry - VISHAY
- / 22+
- 6000
- --
-
Hangzhou Weston Network Technology Co., LtdChina+86 13418718544+86 13418718544
Select The Same ModelsSend Inquiry(0)si2319cds-t1-ge3 DataSheet Download Figures and information are for reference only, subject to actual PDF- Standard Packaging:Three Thousand
- Category:Separated Semiconductor Products
- Family:FET - Single
- Series:TrenchFET&Reg;
- FET Type:MOSFET P Channel, Metal Oxide
- FET Characteristics:Logic Level Gate
- Drain To Source Voltage (Vdss):40V
- Current - Continuous Drain (Id) @ 25&Deg; C:4.4A
- Open State Rds (Maximum) @ IdVgs @ 25&Deg; C:77 Milliohms @ 3.1A, 10V
- Vgs (Th) At Id (Maximum):2.5V @ 250&Micro; A
- Gate Charge (Qg) @ Vgs:21nC @ 10V
- Input Capacity (Ciss) @ Vds:595pF @ 20V
- Power - Maximum:2.5W
- Installation Type:Surface Mount
- Packaging/Housing:TO-236-3, SC-59, SOT-23-3
- Supplier Equipment Packaging:SOT-23-3 (TO-236)
- Packing:Tape and Reel (TR)
- Other Name:SI2319CDS-T1-GE3TR