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si2319cds-t1-ge3 DataSheet Download Figures and information are for reference only, subject to actual PDF
  • Standard Packaging:Three Thousand
  • Category:Separated Semiconductor Products
  • Family:FET - Single
  • Series:TrenchFET&Reg;
  • FET Type:MOSFET P Channel, Metal Oxide
  • FET Characteristics:Logic Level Gate
  • Drain To Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25&Deg; C:4.4A
  • Open State Rds (Maximum) @ IdVgs @ 25&Deg; C:77 Milliohms @ 3.1A, 10V
  • Vgs (Th) At Id (Maximum):2.5V @ 250&Micro; A
  • Gate Charge (Qg) @ Vgs:21nC @ 10V
  • Input Capacity (Ciss) @ Vds:595pF @ 20V
  • Power - Maximum:2.5W
  • Installation Type:Surface Mount
  • Packaging/Housing:TO-236-3, SC-59, SOT-23-3
  • Supplier Equipment Packaging:SOT-23-3 (TO-236)
  • Packing:Tape and Reel (TR)
  • Other Name:SI2319CDS-T1-GE3TR