3N165
| Model | 3N165 |
| Description | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
| PDF file | Total 2 pages (File size: 31K) |
| Chip Manufacturer | CALOGIC |
Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
•
Very High Impedance
•
High Gate Breakdown
•
Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . .
±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
BOTTOM VIEW
TO-99
D
2
G
2
S
D
1
G
1
C
0180
2506
C
G2
G1
D2
D1
S
ORDERING INFORMATION
DEVICE SCHEMATIC
1
7
Part
3N165-66
X3N165-66
5
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
3
8
4
0190
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
I
GSSR
I
GSSF
I
DSS
I
SDS
I
D(on)
V
GS(th)
V
GS(th)
r
DS(on)
PARAMETER
Gate Reverse Leakage Current
Gate Forward Leakage Current
Drain to Source Leakage Current
Source to Drain Leakage Current
On Drain Current
Gate Source Threshold Voltage
Gate Source Threshold Voltage
Drain Source ON Resistance
-5
-2
-2
MIN
MAX
10
-10
-25
-200
-400
-30
-5
-5
300
ohms
mA
V
pA
V
DS
= -20V
V
SD
= -20V, V
DB
= 0
V
DS
= -15V, V
GS
= -10V
V
DS
= -15V, I
D
= -10µA
V
DS
= V
GS
, I
D
= -10µA
V
GS
= -20V, I
D
= -100µA
UNITS
V
GS
= 40V
V
GS
= -40V
T
A
= +125
o
C
TEST CONDITIONS
